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Abstract Strong light–matter interactions in two-dimensional layered materials (2D materials) have attracted the interest of researchers from interdisciplinary fields for more than a decade now. A unique phenomenon in some 2D materials is their large exciton binding energies (BEs), increasing the likelihood of exciton survival at room temperature. It is this large BE that mediates the intense light–matter interactions of many of the 2D materials, particularly in their monolayer limit, where the interplay of excitonic phenomena poses a wealth of opportunities for high-performance optoelectronics and quantum photonics. Within quantum photonics, quantum information science (QIS) is growing rapidly, where photons are a promising platform for information processing due to their low-noise properties, excellent modal control, and long-distance propagation. A central element for QIS applications is a single photon emitter (SPE) source, where an ideal on-demand SPE emits exactly one photon at a time into a given spatiotemporal mode. Recently, 2D materials have shown practical appeal for QIS which is directly driven from their unique layered crystalline structure. This structural attribute of 2D materials facilitates their integration with optical elements more easily than the SPEs in conventional three-dimensional solid state materials, such as diamond and SiC. In this review article, we will discuss recent advances made with 2D materials towards their use as quantum emitters, where the SPE emission properties maybe modulated deterministically. The use of unique scanning tunneling microscopy tools for thein-situgeneration and characterization of defects is presented, along with theoretical first-principles frameworks and machine learning approaches to model the structure-property relationship of exciton–defect interactions within the lattice towards SPEs. Given the rapid progress made in this area, the SPEs in 2D materials are emerging as promising sources of nonclassical light emitters, well-poised to advance quantum photonics in the future. 

Encapsulating Cs4PbBr6 quantum dots in silicon nano-sheets not only stabilizes the halide perovskite, but also takes advantage of the nano-sheet for a compatible integration with the traditional silicon semiconductor. Here, we report the preparation of un-passivated Cs4PbBr6 ellipsoidal nanocrystals and pseudo-spherical quantum dots in silicon nano-sheets and their enhanced photoluminescence (PL). For a sample with low concentrations of quantum dots in silicon nano-sheets, the emission from Cs4PbBr6 pseudo-spherical quantum dots is quenched and is dominated with Pb2+ ion/silicene emission, which is very stable during the whole measurement period. For a high concentration of Cs4PbBr6 ellipsoidal nanocrystals in silicon nano-sheets, we have observed Förster resonance energy transfer with up to 87% efficiency through the oscillation of two PL peaks when UV excitation switches between on and off, using recorded video and PL lifetime measurements. In an area of a non-uniform sample containing both ellipsoidal nanocrystals and pseudo-spherical quantum dots, where Pb2+ ion/silicene emissions, broadband emissions from quantum dots, and bandgap edge emissions (515 nm) appear, the 515 nm peak intensity increases five times over 30 min of UV excitation, probably due to a photon recycling effect. This irradiated sample has been stable for one year of ambient storage. Cs4PbBr6 quantum dots encapsulated in silicon nano-sheets can lead to applications of halide perovskite light emitting diodes (PeLEDs) and integration with traditional semiconductor materials. 

Twisted photonic crystals are photonic analogs of twisted monolayer materials such as graphene and their optical property studies are still in their infancy. This paper reports optical properties of twisted single-layer 2D+ moiré photonic crystals where there is a weak modulation in z direction, and bilayer moiré-overlapping-moiré photonic crystals. In weak-coupling bilayer moiré-overlapping-moiré photonic crystals, the light source is less localized with an increasing twist angle, similar to the results reported by the Harvard research group in References 37 and 38 on twisted bilayer photonic crystals, although there is a gradient pattern in the former case. In a strong-coupling case, however, the light source is tightly localized in AA-stacked region in bilayer PhCs with a large twist angle. For single-layer 2D+ moiré photonic crystals, the light source in Ex polarization can be localized and forms resonance modes when the single-layer 2D+ moiré photonic crystal is integrated on a glass substrate. This study leads to a potential application of 2D+ moiré photonic crystal in future on-chip optoelectronic integration. 

High-performance hybrid graphene photodetectors were prepared with endohedral fullerenes deposited on graphene using electrophoretic methods for the first time. Endohedral Sc 3 N@C 80 , which acts as an electron acceptor, was used and the ensuing electronic and optoelectronic properties were measured. Another endohedral fullerene, La@C 82 , was also adsorbed on graphene, which acts as an electron donor. Upon optical illumination, for the Sc 3 N@C 80 –graphene hybrid, the photoinduced free holes are injected into graphene, increasing the hole carrier concentration in graphene, while the photoexcited electrons remain in Sc 3 N@C 80 ; this leads to a high photoresponsivity  of ∼10 9 A W −1 , detectivity D of ∼10 15 Jones, and external quantum efficiency EQE ∼ 10 9 % for the Sc 3 N@C 80 –graphene hybrid. This  is ∼10 times higher compared to other reports of quantum dot-graphene and few layer MoS 2 –graphene heterostructures. Similarly, for the La@C 82 –graphene hybrid,  ∼ 10 8 A W −1 , D ∼ 10 14 Jones, and EQE ∼ 10 6 % were achieved, with electrons being injected into graphene. The exceptional performance gains achieved with both types of hybrid structures confirms the potential of endohedrals to dope graphene for high performance optoelectronic devices using a facile and scalable fabrication process.